Recent advances in germanium emission [Invited]

被引：76
作者：
Boucaud, P. [1 ]
El Kurdi, M. [1 ]
Ghrib, A. [1 ]
Prost, M. [1 ,2 ]
de Kersauson, M. [1 ]
Sauvage, S. [1 ]
Aniel, F. [1 ]
Checoury, X. [1 ]
Beaudoin, G. [3 ]
Largeau, L. [3 ]
Sagnes, I. [3 ]
Ndong, G. [4 ]
Chaigneau, M. [4 ]
Ossikovski, R. [4 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France
[2] STMicroelectronics, F-38920 Crolles, France
[3] CNRS, Lab Photon & Nanostruct, UPR 20, F-91460 Marcoussis, France
[4] Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France
来源：
PHOTONICS RESEARCH | 2013年 / 1卷 / 03期
关键词：
OPTICAL GAIN; INFRARED-ABSORPTION; THEORETICAL-MODEL; CARRIER LIFETIME; BAND-STRUCTURE; GE; SILICON; SI; RECOMBINATION; DEPENDENCE;
D O I：
10.1364/PRJ.1.000102
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks. (C) 2013 Chinese Laser Press
引用
收藏
页码：102 / 109
页数：8
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