Recent advances in germanium emission [Invited]

被引：76

作者：

Boucaud, P. ^{[1
]}

El Kurdi, M. ^{[1
]}

Ghrib, A. ^{[1
]}

Prost, M. ^{[1
,2
]}

de Kersauson, M. ^{[1
]}

Sauvage, S. ^{[1
]}

Aniel, F. ^{[1
]}

Checoury, X. ^{[1
]}

Beaudoin, G. ^{[3
]}

Largeau, L. ^{[3
]}

Sagnes, I. ^{[3
]}

Ndong, G. ^{[4
]}

Chaigneau, M. ^{[4
]}

Ossikovski, R. ^{[4
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

[2] STMicroelectronics, F-38920 Crolles, France

[3] CNRS, Lab Photon & Nanostruct, UPR 20, F-91460 Marcoussis, France

[4] Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France

来源：

PHOTONICS RESEARCH | 2013年 / 1卷 / 03期

关键词：

OPTICAL GAIN; INFRARED-ABSORPTION; THEORETICAL-MODEL; CARRIER LIFETIME; BAND-STRUCTURE; GE; SILICON; SI; RECOMBINATION; DEPENDENCE;

D O I：

10.1364/PRJ.1.000102

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium light emitters for silicon photonics. We discuss the different approaches that were implemented for strain engineering and the issues associated with n-type doping. We show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks. (C) 2013 Chinese Laser Press

引用

页码：102 / 109

页数：8

共 64 条

[1] Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metalorganic chemical vapor deposition
Bai, Yu
Lee, Kenneth E.
Cheng, Chengwei
Lee, Minjoo L.
Fitzgerald, Eugene A.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)
[2] Light emission from strained germanium
Boucaud, P.
El Kurdi, M.
Sauvage, S.
de Kersauson, M.
Ghriband, A.
Checoury, X.
[J]. NATURE PHOTONICS, 2013, 7 (03) : 162 - 162
[3] Tensilely Strained Germanium Nanomembranes as Infrared Optical Gain Media
Boztug, C.
Sanchez-Perez, J. R.
Sudradjat, F. F.
Jacobson, R. B.
Paskiewicz, D. M.
Lagally, M. G.
Paiella, R.
[J]. SMALL, 2013, 9 (04) : 622 - 630
[4] An electrically pumped germanium laser
Camacho-Aguilera, Rodolfo E.
Cai, Yan
Patel, Neil
Bessette, Jonathan T.
Romagnoli, Marco
Kimerling, Lionel C.
Michel, Jurgen
[J]. OPTICS EXPRESS, 2012, 20 (10): : 11316 - 11320
[5] Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
Capellini, G.
Kozlowski, G.
Yamamoto, Y.
Lisker, M.
Wenger, C.
Niu, G.
Zaumseil, P.
Tillack, B.
Ghrib, A.
de Kersauson, M.
El Kurdi, M.
Boucaud, P.
Schroeder, T.
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (01)
[6] Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain
Carroll, Lee
Friedli, Peter
Neuenschwander, Stefan
Sigg, Hans
Cecchi, Stefano
Isa, Fabio
Chrastina, Daniel
Isella, Giovanni
Fedoryshyn, Yuriy
Faist, Jerome
[J]. PHYSICAL REVIEW LETTERS, 2012, 109 (05)
[7] Optical gain of germanium infrared lasers on different crystal orientations
Chang, Guo-En
Cheng, Henry H.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (06)
[8] Theory of optical gain of Ge-SixGeySn1-x-y quantum-well lasers
Chang, Shu-Wei
Chuang, Shun Lien
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (3-4) : 249 - 256
[9] Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon
Cheng, Szu-Lin
Shambat, Gary
Lu, Jesse
Yu, Hyun-Yong
Saraswat, Krishna
Kamins, Theodore I.
Vuckovic, Jelena
Nishi, Yoshio
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (21)
[10] Cheng Szu-Lin, 2009, Opt Express, V17, P10019

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