Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)

被引：46
作者：
Erwin, SC [1 ]
Baski, AA
Whitman, LJ
Rudd, RE
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.83.1818
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We develop an exactly solvable microscopic model for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system. The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.
引用
收藏
页码：1818 / 1821
页数：4
相关论文
共 7 条
  • [1] The structure of Si(112):Ga-(Nx1) reconstructions
    Baski, AA
    Erwin, SC
    Whitman, LJ
    [J]. SURFACE SCIENCE, 1999, 423 (2-3) : L265 - L270
  • [2] Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics
    Bockstedte, M
    Kley, A
    Neugebauer, J
    Scheffler, M
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 1997, 107 (1-3) : 187 - 222
  • [3] ERWIN SC, CONDMAT9905150
  • [4] GROWTH AND ENERGETICS OF GA AND AL CHAINS ON SI(112)
    JUNG, TM
    PROKES, SM
    KAPLAN, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1838 - 1842
  • [5] Interplay of stress, structure, and stoichiometry in Ge-covered Si(001)
    Liu, F
    Lagally, MG
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (17) : 3156 - 3159
  • [6] ATOMS, MOLECULES, SOLIDS, AND SURFACES - APPLICATIONS OF THE GENERALIZED GRADIENT APPROXIMATION FOR EXCHANGE AND CORRELATION
    PERDEW, JP
    CHEVARY, JA
    VOSKO, SH
    JACKSON, KA
    PEDERSON, MR
    SINGH, DJ
    FIOLHAIS, C
    [J]. PHYSICAL REVIEW B, 1992, 46 (11): : 6671 - 6687
  • [7] MISSING DIMERS AND STRAIN RELIEF IN GE FILMS ON SI(100)
    TERSOFF, J
    [J]. PHYSICAL REVIEW B, 1992, 45 (15): : 8833 - 8836
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