Raman spectra studies of MBE-grown n-GaAs/SI-GaAs films

被引：1

作者：

Wang Bin ^{[1
,2
]}

Xu Xiao-xuan ^{[1
,2
]}

Qin Zhe ^{[1
,2
]}

Song Ning ^{[1
,2
]}

Zhang Cun-zhou ^{[1
,2
]}

机构：

[1] Nankai Univ, TEDA Appl Phys Sch, Tianjin 300457, Peoples R China

[2] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China

来源：

SPECTROSCOPY AND SPECTRAL ANALYSIS | 2008年 / 28卷 / 09期

关键词：

molecular beam epitaxy; n-GaAs/SI-GaAs; doping content; Raman spectra;

D O I：

10.3964/j.issn.1000-0593(2008)09-2103-04

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory.

引用

页码：2103 / 2106

页数：4

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