Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

被引：5

作者：

Pashkin, YA

Pekola, JP

Kuzmin, LS

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] Chalmers, Dept Phys, S-41296 Gothenburg, Sweden

[3] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics. (C) 1999 Almerican Vacuum Society. [S0734-211X(99)06204-6].

引用

页码：1413 / 1416

页数：4

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