Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

被引：5
作者：
Pashkin, YA
Pekola, JP
Kuzmin, LS
机构：
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Chalmers, Dept Phys, S-41296 Gothenburg, Sweden
[3] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期
关键词：
D O I：
10.1116/1.590769
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics. (C) 1999 Almerican Vacuum Society. [S0734-211X(99)06204-6].
引用
收藏
页码：1413 / 1416
页数：4
相关论文
共 20 条
  • [1] Averin D., 1991, Modern Problems in Condensed Matter Sciences, V30, P173
  • [2] BUDAVARI S, 1989, MERCK INDEX ENCY CHE, P346
  • [3] OFFSET MASKS FOR LIFT-OFF PHOTOPROCESSING
    DOLAN, GJ
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 337 - 339
  • [4] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS
    FULTON, TA
    DOLAN, GJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (01) : 109 - 112
  • [5] TUNNELING TIME AND OFFSET CHARGING IN SMALL TUNNEL-JUNCTIONS
    GEERLIGS, LJ
    ANDEREGG, VF
    MOOIJ, JE
    [J]. PHYSICA B, 1990, 165 : 973 - 974
  • [6] Grabert H., 1992, Single Charge Tunneling
  • [7] HELLWEGE KH, 1984, LANDOLTBORNSTEIN, P242
  • [8] FABRICATION AND CHARACTERIZATION OF SINGLE-ELECTRON TRANSISTORS AND TRAPS
    JI, L
    DRESSELHAUS, PD
    HAN, SY
    LIN, K
    ZHENG, W
    LUKENS, JE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3619 - 3622
  • [9] KOROTKOV AN, 1992, SPRIN S ELE, V31, P45
  • [10] Noise in Al single electron transistors of stacked design
    Krupenin, VA
    Presnov, DE
    Savvateev, MN
    Scherer, H
    Zorin, AB
    Niemeyer, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) : 3212 - 3215
12