C-V Data and Geometry Parameters of Self-Assembled InAs/GaAs Quantum Rings

被引：0

作者：

Filikhin, I. ^{[1
]}

Suslov, V. M. ^{[1
]}

Vlahovic, B. ^{[1
]}

机构：

[1] North Carolina Cent Univ, Durham, NC 27707 USA

来源：

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年

关键词：

quantum rings; single electron levels; optical properties; SPECTROSCOPY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of the interpretation of the recent CV data given in W. Lei, et al. (Appl. Phys. Lett. 96, 033111 (2010)) for InAs/GaAs quantum rings (QR) is considered. We show that the single-electron spectrum calculations, based on a variant of the oscillator model of this paper, do not correspond to the experimentally proposed geometry of QR. We use the QR geometry that is follows from the oscillator model, due to relation between confinement potential parameters of the oscillator model and real sizes of quantum objects, to calculate the electron energy in a magnetic field. The original effective model, based on three-dimensional single band kp-approximation with energy dependence of effective mass, is applied. These calculations give good fit for experimental data.

引用

页码：62 / 65

页数：4

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