The use of spin transfer nano-oscillators (STNOs) to generate microwave signals in nanoscale devices has aroused tremendous and continuous research interest in recent years. Their key features are frequency tunability, nanoscale size, broad working temperature, and easy integration with standard silicon technology. In this feature article, we give an overview of recent developments and breakthroughs in the materials, geometry design and properties of STNOs. We focus in more depth on our latest advances in STNOs with perpendicular anisotropy, showing a way to improve the output power of STNO towards the mu W range. Challenges and perspectives of the STNOs that might be productive topics for future research are also briefly discussed.
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Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
Cao, Chong Long
Zhou, Yan
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
Zhou, Yan
Jiang, Lijun
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Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
Jiang, Lijun
Pong, Philip W. T.
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Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China