Growth of precursors in silicon using pseudopotential calculations

被引：16

作者：

Chichkine, MP ^{[1
]}

De Souza, MM ^{[1
]}

Narayanan, EMS ^{[1
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.88.085501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the results of pseudopotential calculations, the progression of a single interstitial into small compact clusters and ultimately into chainlike defects is examined. For clusters that consist of more than eight interstitials, the capture of bond-centered interstitials reveals a change in the growth mechanism leading to enhanced stability of clusters. The five-interstitial model is proposed to be a plausible candidate for optically active W centers, observed in ion irradiated silicon.

引用

页码：085501/1 / 085501/4

页数：4

共 25 条

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