Growth of precursors in silicon using pseudopotential calculations

被引：16
作者：
Chichkine, MP [1 ]
De Souza, MM [1 ]
Narayanan, EMS [1 ]
机构：
[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England
来源：
PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.88.085501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Based on the results of pseudopotential calculations, the progression of a single interstitial into small compact clusters and ultimately into chainlike defects is examined. For clusters that consist of more than eight interstitials, the capture of bond-centered interstitials reveals a change in the growth mechanism leading to enhanced stability of clusters. The five-interstitial model is proposed to be a plausible candidate for optically active W centers, observed in ion irradiated silicon.
引用
收藏
页码：085501/1 / 085501/4
页数：4
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