Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

被引：221

作者：

Matsuzaki, Kosuke ^{[1
]}

Nomura, Kenji ^{[2
]}

Yanagi, Hiroshi ^{[1
]}

Kamiya, Toshio ^{[1
,2
]}

Hirano, Masahiro ^{[2
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Japan Sci & Technol Agcy, Frontier Res Ctr, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

copper compounds; epitaxial growth; epitaxial layers; Hall mobility; hole mobility; thin film transistors;

D O I：

10.1063/1.3026539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu(2)O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities similar to 90 cm(2) V(-1) s(-1) comparable to those of single crystals (similar to 100 cm(2) V(-1) s(-1)). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (similar to 0.26 cm(2) V(-1) s(-1) and similar to 6, respectively).

引用

页数：3

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