Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

被引：220
|
作者：
Matsuzaki, Kosuke [1 ]
Nomura, Kenji [2 ]
Yanagi, Hiroshi [1 ]
Kamiya, Toshio [1 ,2 ]
Hirano, Masahiro [2 ]
Hosono, Hideo [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Japan Sci & Technol Agcy, Frontier Res Ctr, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期
关键词：
copper compounds; epitaxial growth; epitaxial layers; Hall mobility; hole mobility; thin film transistors;
D O I：
10.1063/1.3026539
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cu(2)O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities similar to 90 cm(2) V(-1) s(-1) comparable to those of single crystals (similar to 100 cm(2) V(-1) s(-1)). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (similar to 0.26 cm(2) V(-1) s(-1) and similar to 6, respectively).
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页数：3
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