Hall effect in cobalt-doped TiO2-δ -: art. no. 073201

被引：63
|
作者：
Higgins, JS [1 ]
Shinde, SR [1 ]
Ogale, SB [1 ]
Venkatesan, T [1 ]
Greene, RL [1 ]
机构：
[1] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.69.073201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report Hall effect measurements on thin films of cobalt-doped TiO2-delta. Films with a low carrier concentration (10(18)-10(19)/cm(3)) yield a linear behavior in the Hall data while those having a higher carrier concentration (10(21)-10(22)/cm(3)) display anomalous behavior near zero field. In the entire range of carrier concentrations, n-type conduction is observed.
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页数：4
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