Hall effect in cobalt-doped TiO2-δ -: art. no. 073201

被引：64

作者：

Higgins, JS ^{[1
]}

Shinde, SR ^{[1
]}

Ogale, SB ^{[1
]}

Venkatesan, T ^{[1
]}

Greene, RL ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.69.073201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report Hall effect measurements on thin films of cobalt-doped TiO2-delta. Films with a low carrier concentration (10(18)-10(19)/cm(3)) yield a linear behavior in the Hall data while those having a higher carrier concentration (10(21)-10(22)/cm(3)) display anomalous behavior near zero field. In the entire range of carrier concentrations, n-type conduction is observed.

引用

页数：4

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