Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

被引：2
|
作者：
Hong, Moon-Taek [1 ]
Kim, Tae-Soo [1 ]
Park, Ki-Nam [1 ]
Jung, Sukkoo [2 ]
Chang, Younghak [2 ]
Bang, Gyu-Hyun [2 ]
Kim, Hyung-Gu [2 ]
Jeon, Jina [2 ]
Choi, Yoon-Ho [2 ]
Hwang, Sung-Min [3 ]
Song, Jung-Hoon [1 ]
机构：
[1] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea
[2] LG Elect Adv Inst Technol, Seoul 137724, South Korea
[3] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 02期
关键词：
LIGHT-EMITTING-DIODES; EPITAXIAL OVERGROWTH; GAN; PHOTOLUMINESCENCE;
D O I：
10.1063/1.4774302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effects of the patterned lateral over-growth on the residual strain in GaN templates and In incorporation in a-plane InGaN/GaN quantum wells grown on a r-sapphire substrate, by utilizing micro-photoluminescence and Raman scattering spectroscopy. Strong enhancement of emission intensity is observed from the wing area. We report a reduction in the residual strain and different In incorporation in the wing area. The InGaN quantum wells on the merged area have higher In composition with smaller residual strain of the GaN layers underneath. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774302]
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页数：4
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