Kinetic studies of the reaction of tetraethoxysilane with oxygen atoms

被引：24

作者：

Sanogo, O

Zachariah, MR

机构：

[1] Natl. Inst. of Std. and Technology, Chem. Sci. and Technology Laboratory, Gaithersburg

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 08期

关键词：

D O I：

10.1149/1.1837918

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The temperature dependent kinetics of the reaction of tetraethoxysilane (TEOS) with O atom have been determined by fast flow reactor molecular beam sampling. The rate of constant has the form k = 3.4 x 10 (-11) exp (-1304 K/T) cm(3) s(-1) over the temperature range 300 to 673 K and similar to that of H atom abstraction from carbon-bonded ethoxy groups. Gas-phase products of the chemistry have been analyzed which suggest that following formation of the primary radical, subsequent reactions lead to the formation of R3SiO and/or RnSi(OH)(4-n) (n < 4). These species are believed to undergo both four center elimination of ethylene and addition reactions to produce Si-O-Si ligands by dehydration.

引用

页码：2919 / 2923

页数：5

共 13 条

[11] REACTION-MECHANISM OF CHEMICAL VAPOR-DEPOSITION USING TETRAETHYLORTHOSILICATE AND OZONE AT ATMOSPHERIC-PRESSURE [J].