Solar-blind photodetectors based on MXenes-β-Ga2O3 Schottky junctions

In this work, high-performance solar-blind photodetectors based on MXenes-beta-Ga(2)O(3)Schottky junctions have been developed by utilizing transparent conductive MXenes as the Schottky electrode of beta-Ga2O3. Due to the high MXenes-beta-Ga(2)O(3)Schottky barrier, the photodetectors exhibit a rectification ratio as high as over 10(3)at +/- 2 V. At zero bias, the photodiodes show a responsivity of 12.2 mA W(-1)at 248 nm and a detectivity of 6.1 x 10(12)Jones, which are among the best values for beta-Ga2O3-based solar-blind photodetectors working at zero bias. In addition, the Schottky photodiodes show a fast response speed with a rise time of 8 mu s and decay time of 131 mu s. Our results indicate that MXenes may be promising candidate for use as transparent conductive electrodes for UV optoelectronics.