Solar-blind photodetectors based on MXenes-β-Ga2O3 Schottky junctions

被引：61

作者：

Chen, Yancheng ^{[1
]}

Zhang, Kuikui ^{[1
]}

Yang, Xun ^{[1
]}

Chen, Xuexia ^{[1
]}

Sun, Junlu ^{[1
]}

Zhao, Qi ^{[1
]}

Li, Kaiyong ^{[1
]}

Shan, Chongxin ^{[1
]}

机构：

[1] Zhengzhou Univ, Sch Phys & Microelect, Henan Key Lab Diamond Optoelect Mat & Devices, Key Lab Mat Phys,Minist Educ, Zhengzhou 450052, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 48期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

MXene; Ga2O3; photodiode; Schottky; BETA-GA2O3; HETEROJUNCTION; ARRAYS; MXENE; FILMS;

D O I：

10.1088/1361-6463/abae36

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, high-performance solar-blind photodetectors based on MXenes-beta-Ga(2)O(3)Schottky junctions have been developed by utilizing transparent conductive MXenes as the Schottky electrode of beta-Ga2O3. Due to the high MXenes-beta-Ga(2)O(3)Schottky barrier, the photodetectors exhibit a rectification ratio as high as over 10(3)at +/- 2 V. At zero bias, the photodiodes show a responsivity of 12.2 mA W(-1)at 248 nm and a detectivity of 6.1 x 10(12)Jones, which are among the best values for beta-Ga2O3-based solar-blind photodetectors working at zero bias. In addition, the Schottky photodiodes show a fast response speed with a rise time of 8 mu s and decay time of 131 mu s. Our results indicate that MXenes may be promising candidate for use as transparent conductive electrodes for UV optoelectronics.

引用

页数：6

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