GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 μm light emission grown on InP substrate

被引：8

作者：

Grasse, Christian ^{[1
]}

Gruendl, Tobias ^{[1
]}

Sprengel, Stephan ^{[1
]}

Wiecha, Peter ^{[1
]}

Vizbaras, Kristijonas ^{[1
]}

Meyer, Ralf ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷

关键词：

Metalorganic vapor phase epitaxy; Antimonides; Phosphides; Semiconducting III-V materials; Light emitting diodes; ALLOYS; MOVPE; SPECTROSCOPY;

D O I：

10.1016/j.jcrysgro.2012.07.001

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3 mu m light emission by using GaInAs/GaAsSb-based type-II quantum wells. The LED was grown by LP-MOVPE and achieves emission from 2 mu m to 3 mu m at room-temperature. Furthermore a second LED with centered emission at 2.8 mu m has been realized. Hence, the achievable long-wavelength electroluminescence emission with InP-based materials has been extended up to 3 mu m. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：240 / 243

页数：4

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