Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

被引：30

作者：

Dlubak, B. ^{[1
]}

Martin, M. -B.

Deranlot, C.

Bouzehouane, K.

Fusil, S.

Mattana, R.

Petroff, F.

Anane, A.

Seneor, P.

Fert, A.

机构：

[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 20期

关键词：

alumina; dielectric thin films; graphene; sputter deposition; tunnelling; EPITAXIAL GRAPHENE; SPIN INJECTION; TRANSPORT; DEVICE; ART;

D O I：

10.1063/1.4765348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O-2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765348]

引用

页数：3

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