Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

被引：30

作者：

Dlubak, B. ^{[1
]}

Martin, M. -B.

Deranlot, C.

Bouzehouane, K.

Fusil, S.

Mattana, R.

Petroff, F.

Anane, A.

Seneor, P.

Fert, A.

机构：

[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 20期

关键词：

alumina; dielectric thin films; graphene; sputter deposition; tunnelling; EPITAXIAL GRAPHENE; SPIN INJECTION; TRANSPORT; DEVICE; ART;

D O I：

10.1063/1.4765348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O-2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765348]

引用

页数：3

共 28 条

[1] Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices [J].

Avsar, Ahmet ;

Yang, Tsung-Yeh ;

Bae, Sukang ;

Balakrishnan, Jayakumar ;

Volmer, Frank ;

Jaiswal, Manu ;

Yi, Zheng ;

Ali, Syed Rizwan ;

Guentherodt, Gernot ;

Hong, Byung Hee ;

Beschoten, Bernd ;

Oezyilmaz, Barbaros .

NANO LETTERS, 2011, 11 (06) :2363-2368

[2]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[3]

Behin-Aein B, 2010, NAT NANOTECHNOL, V5, P266, DOI [10.1038/nnano.2010.31, 10.1038/NNANO.2010.31]

[4] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[5] The emergence of spin electronics in data storage [J].

Chappert, Claude ;

Fert, Albert ;

Van Dau, Frederic Nguyen .

NATURE MATERIALS, 2007, 6 (11) :813-823

[6] Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide [J].

de Heer, Walt A. ;

Berger, Claire ;

Ruan, Ming ;

Sprinkle, Mike ;

Li, Xuebin ;

Hu, Yike ;

Zhang, Baiqian ;

Hankinson, John ;

Conrad, Edward .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (41) :16900-16905

[7] Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition [J].

Dlubak, B. ;

Kidambi, P. R. ;

Weatherup, R. S. ;

Hofmann, S. ;

Robertson, J. .

APPLIED PHYSICS LETTERS, 2012, 100 (17)

[8] Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene? [J].

Dlubak, B. ;

Seneor, P. ;

Anane, A. ;

Barraud, C. ;

Deranlot, C. ;

Deneuve, D. ;

Servet, B. ;

Mattana, R. ;

Petroff, F. ;

Fert, A. .

APPLIED PHYSICS LETTERS, 2010, 97 (09)

[9]

Dlubak B, 2012, NAT PHYS, V8, P557, DOI [10.1038/NPHYS2331, 10.1038/nphys2331]

[10] Scaling of Al2O3 dielectric for graphene field-effect transistors [J].

Fallahazad, B. ;

Lee, K. ;

Lian, G. ;

Kim, S. ;

Corbet, C. M. ;

Ferrer, D. A. ;

Colombo, L. ;

Tutuc, E. .

APPLIED PHYSICS LETTERS, 2012, 100 (09)

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