Plasma enhanced CVD of low dielectric constant plasma polymerized decahydronaphthalene thin films

被引:1
|
作者
Yang, Y [1 ]
Shim, C
Jung, D
机构
[1] Sungkyunkwan Univ, Dept Phys, Brain Korea Phys Res Div 21, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Dept Phys, Inst Basic Sci, Suwon 440746, South Korea
关键词
decahydronaphthalene; low dielectric constant materials; plasma polymers; plasma power; relative dielectric constant; thermal stability;
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Properties of low dielectric constant, plasma polymerized decahydronaphthalene (PPDHN) thin films deposited by plasma enhanced (PE) CVD were investigated. Plasma power significantly affected the dielectric constants and thermal stability of the deposited films. As plasma power was increased from 30 W to 90 W, the relative dielectric constant, k, of the deposited PPDHN thin films increased from 2.65 to 3.12. With the increase in plasma power, integrated peak areas of C=O stretching (similar to1700 cm(-1)) and O-H stretching (similar to3400 cm(-1)) vibrations increased, while that of the CH, stretching (similar to2900 cm(-1)) vibration decreased. All the PPDHN films were thermally stable to 350degreesC. Upon annealing at 400degreesC, the film deposited at 30 W showed similar to35 % thickness reduction, while the film deposited at 90 W showed only similar to15 % thickness reduction. All the deposited thin films showed a leakage current density below 10(-8) A cm(-2) at 1 MV cm(-1).
引用
收藏
页码:35 / 37
页数:3
相关论文
共 50 条
  • [1] Effects of post-deposition heat treatment on the properties of low dielectric constant plasma polymerized decahydronaphthalene thin films deposited by plasma-enhanced chemical vapor deposition
    Yang, J
    Shim, C
    Jung, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (12B): : L1324 - L1326
  • [2] Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films
    Shim, C
    Choi, J
    Jung, D
    Lee, NE
    Yang, CW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12B): : L1327 - L1329
  • [4] Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition
    Shim, C
    Yang, J
    Quan, YC
    Choi, J
    Jung, D
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 795 - 802
  • [5] Low dielectric constant plasma polymerized methyl-cyclohexane thin films deposited by inductively coupled plasma-enhanced chemical vapor deposition
    Jo, H
    Quan, YC
    Jung, D
    THIN SOLID FILMS, 2001, 384 (01) : 33 - 36
  • [6] Plasma enhanced chemical vapor deposition of low dielectric constant SiCFO thin films
    Kim, TH
    Im, YH
    Hahn, YB
    CHEMICAL PHYSICS LETTERS, 2003, 368 (1-2) : 36 - 40
  • [7] PHOTOCONDUCTION IN POLYVINYL CARBAZOLE THIN FILMS POLYMERIZED BY PLASMA-CVD.
    Inoue, Masumi
    Morita, Hiromasa
    Takai, Yoshiaki
    Mizutani, Teruyoshi
    Ieda, Masayuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (10): : 1495 - 1499
  • [8] Dielectric properties of plasma-polymerized diphenyl thin films
    Chowdhury, FUZ
    Bhuiyan, AH
    THIN SOLID FILMS, 2000, 370 (1-2) : 78 - 84
  • [9] Remote microwave plasma enhanced CVD of low dielectric constant SiOxFy films from FASi-4 and oxygen
    Virmani, M
    Jin, Z
    Leusink, GJ
    Raupp, GB
    Cale, TS
    Laxman, RK
    Hochberg, AK
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 869 - 878
  • [10] Dielectric Characteristics of Low-Dielectric-Constant Plasma-Polymerized SiCOH Films Formed with Phenyltrimethoxysilane Precursor
    Ban, Wonjin
    Kim, Suwon
    Kwon, Sungyool
    Yu, Segi
    Jung, Donggeun
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (10) : 7471 - 7475