Ion beam synthesis of α-CNx:H films

被引：18

作者：

Kopustinskas, V

Meskinis, S

Grigaliunas, V

Tamulevicius, S

Puceta, M

Niaura, G

Tomasiunas, R

机构：

[1] Kaunas Univ Technol, Inst Phys Elect, LT-3009 Kaunas, Lithuania

[2] Inst Chem, LT-2600 Vilnius, Lithuania

[3] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 151卷

关键词：

hydrogenated amorphous carbon nitride films; ion beam deposition; Raman spectra; refractive index; wear resistance;

D O I：

10.1016/S0257-8972(01)01573-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous carbon nitride (alpha-CNx:H) films (100-200 nm) were grown by direct ion beam deposition on Si(100) substrates. Ion beams have been produced by electrostatic ion sources from C6H14 + H-2 + N-2 gas mixtures. The influence of N-2 / C6H14 + H-2 + N-2 gas ratio (N-2 concentration) on structure and properties of alpha-CNx:H films was investigated. The increase of N-2 concentration in the gas mixture resulted in decrease of sp(3) bonding and formation of the more graphite-like ot-CN,,:H films. Growth rate and refractive index of formed alpha-CNx:H films decreased with increasing N-2 concentration. A slight decrease of wear resistance ( < 20%) of the formed films with higher nitrogen ratio was also observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：180 / 183

页数：4

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