Ion beam synthesis of α-CNx:H films

Hydrogenated amorphous carbon nitride (alpha-CNx:H) films (100-200 nm) were grown by direct ion beam deposition on Si(100) substrates. Ion beams have been produced by electrostatic ion sources from C6H14 + H-2 + N-2 gas mixtures. The influence of N-2 / C6H14 + H-2 + N-2 gas ratio (N-2 concentration) on structure and properties of alpha-CNx:H films was investigated. The increase of N-2 concentration in the gas mixture resulted in decrease of sp(3) bonding and formation of the more graphite-like ot-CN,,:H films. Growth rate and refractive index of formed alpha-CNx:H films decreased with increasing N-2 concentration. A slight decrease of wear resistance ( < 20%) of the formed films with higher nitrogen ratio was also observed. (C) 2002 Elsevier Science B.V. All rights reserved.