Harmonic and intermodulation performance of moderate inversion MOSFET transconductors

被引:1
作者
Abuelma'atti, Muhammad Taher [1 ]
机构
[1] King Fahd Univ Petr & Minerals, Dhahran 31261, Saudi Arabia
关键词
Harmonic distortion; Intermodulation distortion; MOSFET; Transconductors; LOW-VOLTAGE; REGION;
D O I
10.1016/j.aeue.2012.03.007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article discusses the harmonic and intermodulation performance of moderate inversion MOSFET transconductors. The bulk of the nMOS transistor is tied to ground, at all levels of inversion, including moderate inversion and the transistor is operating in the saturation region where it behaves qualitatively as a constant current source. The current-voltage characteristic of the transistor is approximated using a Fourier-series model. Using this model, analytical expressions are obtained for amplitudes of the harmonics and intermodulation products resulting from multi-sinusoidal gate-to-source input voltages. The special case of a two equal-amplitude sinusoidal input is considered in detail and the results are compared with previously published results. (c) 2012 Elsevier GmbH. All rights reserved.
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页码:892 / 896
页数:5
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