High-performance solution-processed amorphous ZrInZnO thin-film transistors

被引：3
|
作者：
Chung, Ya-Wei [3 ]
Chen, Fang-Chung [1 ,2 ]
Chen, Ying-Ping [3 ]
Chen, Yu-Ze [4 ]
Chueh, Yu-Lun [4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期
关键词：
oxide semiconductors; amorphous thin films; transistors; zirconium;
D O I：
10.1002/pssr.201206323
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：400 / 402
页数：3
相关论文
共 50 条
  • [41] High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum
    Luo, Dongxiang
    Lan, Linfeng
    Xu, Miao
    Xu, Hua
    Li, Min
    Zou, Jianhua
    Tao, Hong
    Wang, Lei
    Peng, Junbiao
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (9-10): : 403 - 405
  • [42] Silicon for thin-film transistors
    Wagner, S
    Gleskova, H
    Cheng, IC
    Wu, M
    THIN SOLID FILMS, 2003, 430 (1-2) : 15 - 19
  • [43] Ultrathin amorphous ZnGexSnO films for high performance ultra-thin-film transistors
    Yue, Shilu
    Lu, Jianguo
    Lu, Rongkai
    Li, Siqin
    Li, Xifeng
    Zhang, Jianhua
    Chen, Lingxiang
    Ye, Zhizhen
    APPLIED PHYSICS LETTERS, 2018, 113 (01)
  • [44] Benzopyrazine-fused tetracene derivatives: Thin-film formation at the crystalline mesophase for solution-processed hole transporting devices
    Kojima, Shungo
    Okamoto, Toshihiro
    Miwa, Kazumoto
    Sato, Hiroyasu
    Takeya, Jun
    Matsuo, Yutaka
    ORGANIC ELECTRONICS, 2013, 14 (02) : 437 - 444
  • [45] Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability
    Park, Sunghyun
    Park, Boyeon
    Kim, Woojong
    Yoo, Kunsang
    Kim, Yong-Hoon
    APPLIED PHYSICS EXPRESS, 2023, 16 (11)
  • [46] Analysis of bias stress on unpassivated hydrogenated amorphous silicon thin-film transistors
    Slade, HC
    Shur, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) : 1548 - 1553
  • [47] Solution-processed Ga-Cd-O thin-films with tunable bandgaps and their transistors
    Liang, Lingyan
    Liang, Yu
    Wu, Weihua
    Song, Anran
    Yu, Jingjing
    Chang, Ting-Chang
    Lan, Linfeng
    Yao, Zhiqiang
    Cao, Hongtao
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (33)
  • [48] HIGH-FIELD EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS
    QUINN, M
    MIGLIORATO, P
    REITA, C
    PECORA, A
    TALLARIDA, G
    FORTUNATO, G
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1994, 141 (01): : 45 - 49
  • [49] Microfluidic-method-processed p-type NiOx Thin-film Transistors
    Liang Yu
    Liang Ling-Yan
    Wu Wei-Hua
    Pei Yu
    Yao Zhi-Qiang
    Cao Hong-Tao
    JOURNAL OF INORGANIC MATERIALS, 2019, 34 (01) : 79 - 84
  • [50] A high-performance solution-processed small molecule: alkylselenophene-substituted benzodithiophene organic solar cell
    Kim, Yu Jin
    Baek, Jang Yeol
    Ha, Jong-jin
    Chung, Dae Sung
    Kwon, Soon-Ki
    Park, Chan Eon
    Kim, Yun-Hi
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (25) : 4937 - 4946
12345