High-performance solution-processed amorphous ZrInZnO thin-film transistors

被引：3
|
作者：
Chung, Ya-Wei [3 ]
Chen, Fang-Chung [1 ,2 ]
Chen, Ying-Ping [3 ]
Chen, Yu-Ze [4 ]
Chueh, Yu-Lun [4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期
关键词：
oxide semiconductors; amorphous thin films; transistors; zirconium;
D O I：
10.1002/pssr.201206323
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：400 / 402
页数：3
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