High-performance solution-processed amorphous ZrInZnO thin-film transistors

被引：3

作者：

Chung, Ya-Wei ^{[3
]}

Chen, Fang-Chung ^{[1
,2
]}

Chen, Ying-Ping ^{[3
]}

Chen, Yu-Ze ^{[4
]}

Chueh, Yu-Lun ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期

关键词：

oxide semiconductors; amorphous thin films; transistors; zirconium;

D O I：

10.1002/pssr.201206323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：400 / 402

页数：3

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