High-performance solution-processed amorphous ZrInZnO thin-film transistors

被引：3
|
作者：
Chung, Ya-Wei [3 ]
Chen, Fang-Chung [1 ,2 ]
Chen, Ying-Ping [3 ]
Chen, Yu-Ze [4 ]
Chueh, Yu-Lun [4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期
关键词：
oxide semiconductors; amorphous thin films; transistors; zirconium;
D O I：
10.1002/pssr.201206323
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：400 / 402
页数：3
相关论文
共 50 条
  • [1] High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal-Organic Decomposition Method
    Xie, Yingtao
    Wang, Dongping
    Fong, Hon Hang
    JOURNAL OF NANOMATERIALS, 2018, 2018
  • [2] Heterojunction Channel Engineering in Performance Enhancement of Solution-Processed Oxide Thin-Film Transistors
    Cai, Wensi
    Li, Mengchao
    Lu, Shirong
    Qian, Qingkai
    Zang, Zhigang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (06) : 3085 - 3091
  • [3] Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation
    Cai, Wensi
    Li, Haiyun
    Li, Mengchao
    Zang, Zhigang
    JOURNAL OF SEMICONDUCTORS, 2022, 43 (03)
  • [4] Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications
    Zhang, Feng
    Liu, Guoxia
    Liu, Ao
    Shin, Byoungchul
    Shan, Fukai
    CERAMICS INTERNATIONAL, 2015, 41 (10) : 13218 - 13223
  • [5] Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors
    Stallings, Katie
    Smith, Jeremy
    Chen, Yao
    Zeng, Li
    Wang, Binghao
    Di Carlo, Gabriele
    Bedzyk, Michael J.
    Facchetti, Antonio
    Marks, Tobin J.
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (13) : 15399 - 15408
  • [6] Solution-processed metal-oxide thin-film transistors: a review of recent developments
    Chen, Rongsheng
    Lan, Linfeng
    NANOTECHNOLOGY, 2019, 30 (31)
  • [7] Solution Processed Amorphous ZnSnO Thin-Film Phototransistors
    Feng, Lisha
    Yu, Genyuan
    Li, Xifeng
    Zhang, Jianhua
    Ye, Zhizhen
    Lu, Jianguo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (01) : 206 - 210
  • [8] Nanomaterials in transistors: From high-performance to thin-film applications
    Franklin, Aaron D.
    SCIENCE, 2015, 349 (6249)
  • [9] Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors
    Kang, Joohoon
    Sangwan, Vinod K.
    Lee, Hong-Sub
    Liu, Xiaolong
    Hersam, Mark C.
    ACS PHOTONICS, 2018, 5 (10): : 3996 - 4002
  • [10] Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
    Benwadih, Mohammed
    Chroboczek, J. A.
    Ghibaudo, Gerard
    Coppard, Romain
    Vuillaume, Dominique
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
12345