Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

被引：46

作者：

Jin, W ^{[1
]}

Chan, PCH ^{[1
]}

Fung, SKH ^{[1
]}

Ko, PK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clear Water Bay, Kowloon, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

excess low-frequency noise; floating-body effect; partially depleted SOI MOSFET's; shot noise;

D O I：

10.1109/16.766881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Floating-body partially depleted (PD) SOI MOS-FET's exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with Bicker noise, is amplified in the device through the floating-body effect (FBE), A physically-based noise model is proposed which predicts that the, excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.

引用

页码：1180 / 1185

页数：6

共 12 条

[1]

Chen J., 1990, 1990 IEEE SOS/SOI Technology Conference. (Cat. No.90CH2891-0), P40, DOI 10.1109/SOSSOI.1990.145699

[2]

COLINGE JP, 1991, SILICON INSULATOR TE

[3] Noise contribution of the body resistance in partially-depleted SOI MOSFET's [J].

Faccio, F ;

Anghinolfi, F ;

Heijne, EHM ;

Jarron, P ;

Cristoloveanu, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) :1033-1038

[4] Frequency dispersion in partially depleted SOI MOSFET output resistance [J].

Fung, SKH ;

Wong, MK ;

Chan, MS ;

Nguyen, CT ;

Ko, PK .

1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, :146-147

[5] 1-F NOISE [J].

HOOGE, FN .

PHYSICA B & C, 1976, 83 (01) :14-23

[6] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

HUNG, KK ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :654-665

[7] NOISE ASSOCIATED WITH SUBSTRATE CURRENT IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS [J].

JINDAL, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1047-1052

[8]

Jomaah J, 1996, ELEC SOC S, V96, P248

[9]

McWhorter A.L., 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[10] THE KINK-RELATED EXCESS LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSTS [J].

SIMOEN, E ;

MAGNUSSON, U ;

ROTONDARO, ALP ;

CLAEYS, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :330-339

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