Effect of water in ambient air on hysteresis in pentacene field-effect transistors containing gate dielectrics coated with polymers with different functional groups

被引:87
|
作者
Kim, Se Hyun [1 ]
Yang, Hoichang [2 ]
Yang, Sang Yoon [1 ]
Hong, Kipyo [1 ]
Choi, Danbi [1 ]
Yang, Chanwoo [1 ]
Chung, Dae Sung [1 ]
Park, Chan Eon [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea
[2] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA
关键词
OFETs; pentacene; polymer dielectrics; hysteresis;
D O I
10.1016/j.orgel.2008.05.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the effect of water in ambient air on the hysteresis phenomena of pentacene field-effect transistors with polymer/SiO2 gate dielectrics. The polarity of the polymer surface was controlled by using three different polymers: poly(styrene), poly(4-hydroxy styrene), and poly(4-vinyl pyridine). Water diffusion into the interface between the pentacene and the gate dielectric was driven by the polarity of the polymer surface, resulting in considerable hysteresis and degradation of device performances. The observed hysteresis behaviors can be explained in terms of donor- and acceptor-like trap formation by water molecules that have diffused between the pentacene and the gate dielectric. The different effects of these traps on hysteresis depending on the functional groups at the polymer Surface were also investigated. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:673 / 677
页数:5
相关论文
共 50 条
  • [1] Styrenic polymers as gate dielectrics for pentacene field-effect transistors
    Nunes, G
    Zane, SG
    Meth, JS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)
  • [2] Styrenic polymers as gate dielectrics for pentacene field-effect transistors
    Nunes Jr., G.
    Zane, S.G.
    Meth, J.S.
    Journal of Applied Physics, 2005, 98 (10):
  • [3] Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors
    Cahyadi, T.
    Tan, H. S.
    Mhaisalkar, S. G.
    Lee, P. S.
    Boey, F.
    Chen, Z. -K.
    Ng, C. M.
    Rao, V. R.
    Qi, G. J.
    APPLIED PHYSICS LETTERS, 2007, 91 (24)
  • [4] Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
    Kim, Se Hyun
    Nam, Sooji
    Jang, Jaeyoung
    Hong, Kipyo
    Yang, Chanwoo
    Chung, Dae Sung
    Park, Chan Eon
    Choi, Woon-Seop
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
  • [5] Carbon nanotubes coated with alumina as gate dielectrics of field-effect transistors
    Fu, L
    Liu, YQ
    Liu, ZM
    Han, BX
    Cao, LC
    Wei, DC
    Yu, G
    Zhu, DB
    ADVANCED MATERIALS, 2006, 18 (02) : 181 - +
  • [6] Controllable carrier density of pentacene field-effect transistors using polyacrylates as gate dielectrics
    Cheng, Jung-An
    Chuang, Chiao-Shun
    Chang, Ming-Nung
    Tsai, Yan-Chu
    Shieh, Han-Ping D.
    ORGANIC ELECTRONICS, 2008, 9 (06) : 1069 - 1075
  • [7] Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors
    Yaginuma, S
    Yamaguchi, J
    Itaka, K
    Koinuma, H
    THIN SOLID FILMS, 2005, 486 (1-2) : 218 - 221
  • [8] Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics
    Yang, SY
    Kim, SH
    Shin, K
    Jeon, H
    Park, CE
    APPLIED PHYSICS LETTERS, 2006, 88 (17)
  • [9] PSpice Model for Hysteresis in Pentacene Field-Effect Transistors
    Ucurum, C.
    Siemund, H.
    Goebel, H.
    2008 IEEE CONFERENCE ON POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS AND 2008 IEEE INTERDISCIPLINARY CONFERENCE ON PORTABLE INFORMATION DEVICES, 2008, : 212 - 214
  • [10] Functional Zwitterionic Polyurethanes as Gate Dielectrics for Organic Field-Effect Transistors
    Sun, Qian
    Hu, Jinkang
    Chen, Chi
    Wan, Xiaobo
    Mu, Youbing
    ADVANCED ELECTRONIC MATERIALS, 2024,