Pure and Al-doped SnO2 thin films: Structural, morphological and electrical properties

被引：0

作者：

Singh, Kulwinder ^{[1
]}

Singh, Amandeep ^{[1
]}

Kumar, Manjeet ^{[2
]}

Bala, Rajni ^{[3
]}

Thakur, Anup ^{[4
]}

Kumar, Akshay ^{[1
]}

机构：

[1] Sri Guru Granth Sahib World Univ, Dept Nanotechnol, Fatehgarh Sahib 140406, Punjab, India

[2] Incheon Natl Univ, Dept Elect Engn, Incheon 406772, South Korea

[3] Punjabi Univ, Dept Math, Patiala 147002, Punjab, India

[4] Punjabi Univ, Dept Basic & Appl Sci, Patiala 147002, Punjab, India

来源：

3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019) | 2020年 / 2220卷

关键词：

SnO2; Dopant; Thin films; Crystal structure; Morphological properties; Electrical Properties; OPTICAL-PROPERTIES; NANOSTRUCTURES; DEPOSITION;

D O I：

10.1063/5.0001110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of pure and 3% Al-doped nano-crystalline SnO2 were deposited by spin coating method on glass substrates. Structural, morphological and electrical properties of the deposited films were investigated. X-ray diffraction results confirmed the formation of tetragonal phase in the deposited films. Fourier transform infrared spectroscopy results confirmed the presence of Sn-O-Sn, and Sn-O bonding in the deposited films. Addition of Al to SnO2, leads to shift in vibrational modes due to smaller radius of dopant moiety. Field emission scanning electron microscopy results depicted that with Al-doping the average particle size reduced as compared to pure sample. An increase in electrical current was observed with addition of dopant material than pure sample.

引用

页数：4

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