Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators

被引：9

作者：

Khine, Lynn ^{[1
]}

Wong, Lionel Y. L. ^{[1
]}

Soon, Jeffrey B. W. ^{[1
]}

Tsai, Julius M. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

NEMS/MEMS TECHNOLOGY AND DEVICES | 2011年 / 254卷

关键词：

AlN properties; mechanical characterization; MEMS resonator;

D O I：

10.4028/www.scientific.net/AMR.254.74

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an effective evaluation of piezoelectric coefficients (d(31) and d(33)) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d(31) is 1.60pm/V and the d(33) value is 3.15pm/V, which are comparable to the coefficient values published in literature. Fabrication of these resonator structures is straightforward and can be incorporated with other more complex steps. Hence, these resonators can serve as an excellent test structures to evaluate and predict the quality of AlN growth and piezoelectric properties of thin AlN films.

引用

页码：74 / 77

页数：4

共 4 条

[1]

Chen Q., 2006, IEEE INT FREQ CONTR, P104

[2]

Doll J.C., 2009, INT C SOL STAT SENS, P1896

[3] Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications [J].