Growth mode of InxGa1-xAs (0≤x≤0.5) on GaAs(001) under As-deficient conditions -: art. no. 155318

被引：7

作者：

Ohtake, A ^{[1
]}

Ozeki, M

机构：

[1] JRCAT, Tsukuba, Ibaraki 3050046, Japan

[2] NIMS, Tsukuba, Ibaraki 3050047, Japan

[3] Miyazaki Univ, Fac Engn, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.65.155318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have systematically studied the growth modes of InxGa1-xAs on GaAs(001) (0less than or equal toxless than or equal to0.5) under As-deficient conditions. The InxGa1-xAs film coherently grows in a layer-by-layer mode, with a significant amount of In atoms being segregated to the growing surface. The In segregation results in the depletion of In in the InxGa1-xAs film, so that the strain at the coherent interface is reduced. The growth under higher As fluxes suppresses the In segregation and induces the formation of the relaxed InxGa1-xAs islands.

引用

页数：5

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