Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors

被引：0

作者：

Wang, Z.

Reimann, K. ^{[1
]}

Woerner, M.

Elsaesser, T.

Hofstetter, D.

Hwang, J.

Schaff, W. J.

Eastman, L. F.

机构：

[1] Max Born Inst Nichlineare Opt & Kurzzeitspektrosk, D-12489 Berlin, Germany

[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

[3] Cornell Univ, Ithaca, NY 14853 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期

关键词：

phonon sidebands; GaN/AlGaN heterostructure; intersubband transition; independent boson model;

D O I：

10.1016/j.physe.2005.12.132

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al0.8Ga0.2N heterostructure. In these experiments, we observe around zero time delay distinct phonon sidebands, which disappear because of spectral diffusion with a time constant of 80 fs. The signal itself decays with a time constant of 380 fs. The independent boson model agrees very well with all observed results. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：562 / 565

页数：4

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