Ultrafast magnetization switching in nanoscale magnetic dots

被引:45
作者
El-Ghazaly, Amal [1 ]
Tran, Brandon [2 ]
Ceballos, Alejandro [3 ]
Lambert, Charles-Henri [1 ]
Pattabi, Akshay [1 ]
Salahuddin, Sayeef [1 ]
Hellman, Frances [2 ,3 ]
Bokor, Jeffrey [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
SIZE; REVERSAL; MRAM;
D O I
10.1063/1.5098453
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultrafast magnetization switching at picosecond and sub-picosecond time scales has tremendous technological potential but still poses numerous questions regarding the underlying quantum mechanical phenomena, including the roles of and interactions between the electrons, spins, and phonons (lattice). At the nanometer-scale dimensions relevant for modern applications, these phenomena become increasingly more pronounced. Until now, helicity-independent all-optical switching (HI-AOS) has been largely limited to amorphous Gd-Fe-Co alloys, for which scaling was challenging due to their relatively low anisotropies. In this work, we demonstrate HI-AOS in amorphous GdCo and scale it to nanometer dimensions while still maintaining uniform out-of-plane magnetization. Single shot HI-AOS is demonstrated in these patterned samples down to a minimum optically detectable magnetic dot size of 200nm. The ultrafast switching behavior was also confirmed using time-resolved magneto-optic Kerr effect measurements and found to settle to its opposite magnetization state at faster rates for smaller dot diameters, passing a threshold of 75% magnetization reversal within approximately 2 ps for a 200nm dot compared to approximately 40 ps for a 15m pattern. The size dependence of the ultrafast switching is explained in terms of the electron-phonon and spin-lattice interactions.
引用
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页数:5
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