Point defects and interference effects in electron emission of Si/SiO2:Li,Na,K structures

被引：1
|
作者：
Buntov, Evgeny [1 ]
Zatsepin, Anatoly [1 ]
Slesarev, Anatoly [1 ]
Mikhailovich, Anna [1 ]
Mikhaylov, Alexey [2 ]
机构：
[1] Ural Fed Univ, Ekaterinburg 620002, Russia
[2] NI Lobachevskii State Univ, Nizhnii Novgorod 603950, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
electron emission; ion implantation; point defects; silica; silicon; STATES; CENTERS;
D O I：
10.1002/pssa.201532446
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiO2 films, grown on a Si substrate and implanted with Li, Na, and Kions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission-active silica defect centers, and implanted cation-related localized states. [GRAPHICS] (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2672 / 2676
页数：5
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