Point defects and interference effects in electron emission of Si/SiO2:Li,Na,K structures

被引：1
|
作者：
Buntov, Evgeny [1 ]
Zatsepin, Anatoly [1 ]
Slesarev, Anatoly [1 ]
Mikhailovich, Anna [1 ]
Mikhaylov, Alexey [2 ]
机构：
[1] Ural Fed Univ, Ekaterinburg 620002, Russia
[2] NI Lobachevskii State Univ, Nizhnii Novgorod 603950, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
electron emission; ion implantation; point defects; silica; silicon; STATES; CENTERS;
D O I：
10.1002/pssa.201532446
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiO2 films, grown on a Si substrate and implanted with Li, Na, and Kions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission-active silica defect centers, and implanted cation-related localized states. [GRAPHICS] (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2672 / 2676
页数：5
相关论文
共 50 条
  • [31] Characterization of various crystalline structures at the SiO2/Si interface by positrons
    Brauer, G.
    Kuriplach, J.
    Melikhova, O.
    Anwand, W.
    Becvar, F.
    Skorupa, W.
    RADIATION PHYSICS AND CHEMISTRY, 2007, 76 (02) : 195 - 199
  • [32] Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates
    Leonhardt, Darin
    Ghosh, Swapnadip
    Han, Sang M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 335 (01) : 62 - 65
  • [33] Characterization of implantation induced defects in si-implanted SiO2 film
    Hao, Xiaopeng
    Zhou, Chunlan
    Yu, Runsheng
    Wang, Baoyi
    Wei, Long
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (03) : 1350 - 1354
  • [34] Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
    Yang, Yunqi
    Chen, Dongdong
    Li, Di
    Zhao, Tianlong
    Zhang, Weida
    Qiao, Wen
    Liang, Yingjie
    Yang, Yintang
    ADVANCED MATERIALS INTERFACES, 2025, 12 (08):
  • [35] Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures
    V. B. Odzhaev
    A. N. Pyatlitski
    V. S. Prosolovich
    N. S. Kovalchuk
    Ya. A. Soloviev
    D. V. Zhygulin
    D. V. Shestovsky
    Yu. N. Yankovski
    D. I. Brinkevich
    Journal of Applied Spectroscopy, 2022, 89 : 665 - 670
  • [36] Monte Carlo simulation of electron transport in Si/SiO2 superlattices
    Rosini, M
    Jacoboni, C
    Ossicini, S
    OPTICAL PROPERTIES OF NANOCRYSTALS, 2002, 4808 : 170 - 179
  • [37] Inter-trap tunneling in SiO2 films of hydrogen implanted n-Si/SiO2 structures
    Simeonov, S
    Gushterov, A
    Szekeres, A
    Kafedjiiska, E
    2004 International Semiconductor Conference, Vols 1and 2, Proceedings, 2004, : 337 - 340
  • [38] Spin Polarized Electron Transport near the Si/SiO2 Interface
    Jang, Hyuk-Jae
    Appelbaum, Ian
    PHYSICAL REVIEW LETTERS, 2009, 103 (11)
  • [39] Electron emission from excited states of E′ centers in SiO2
    Zatsepin, A. F.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (5-7) : 590 - 593
  • [40] Interfacial oxidation kinetics at SiO2/Si(001) mediated by the generation of point defects: Effect of raising O2 pressure
    Ogawa, Shuichi
    Takakuwa, Yuji
    AIP ADVANCES, 2018, 8 (07):
12345