GaN-based power HEMTs: Parasitic, Reliability and high field issues

被引：13

作者：

Meneghesso, G. ^{[1
]}

Meneghini, M. ^{[1
]}

Bisi, D. ^{[1
]}

Silvestri, R. ^{[1
]}

Zanandrea, A. ^{[1
]}

Hilt, O. ^{[2
]}

Bahat-Treidel, E. ^{[2
]}

Brunner, F. ^{[2
]}

Knauer, A. ^{[2
]}

Wuerfl, J. ^{[2
]}

Zanoni, E. ^{[1
,2
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Inst Hoechstfrequenztec, Inst Leibniz, D-412489 Berlin, Germany

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 | 2013年 / 58卷 / 04期

关键词：

VAPOR-PHASE EPITAXY; BREAKDOWN VOLTAGE; GATE;

D O I：

10.1149/05804.0187ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reviews the main mechanisms responsible for trapping and breakdown in power HEMTs based on gallium nitride. With regard to the trapping mechanisms, we describe the role of carbon and iron buffer doping compensation in determining the dynamic Ron. We also demonstrate how the use of double heterostructure without doping or a single-heterostructure with proper buffer doping compensation can effectively reduce trapping phenomena. In addition, we investigate the breakdown limits of single and double heterostructure (DH) HEMTs, by electrical and electroluminescence characterization. Results indicate that, for the devices adopting double heterostructure without doping or single-heterostructure with proper buffer doping compensation, the breakdown voltage linearly scales with the gate-drain distance, and provides information on the origin of breakdown current components for different bias levels and epitaxial structures.

引用

页码：187 / 198

页数：12

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