Microscopic theory of spin Hall magnetoresistance

被引:16
作者
Kato, T. [1 ]
Ohnuma, Y. [2 ]
Matsuo, M. [2 ,3 ,4 ,5 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[4] RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan
[5] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
关键词
ROOM-TEMPERATURE; NIO;
D O I
10.1103/PhysRevB.102.094437
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is composed of static and dynamic parts. The static part, which is almost independent of the temperature, originates from spin flip caused by an interfacial exchange coupling. However, the dynamic part, which is induced by the creation or annihilation of magnons, has an opposite sign from the static part. By the spin-wave approximation, we predict that the latter results in a nontrivial sign change in the SMR signal at a finite temperature. In addition, we derive the Onsager relation between spin conductance and thermal spin-current noise.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Tunneling anisotropic magnetoresistance in organic spin valves
    Gruenewald, M.
    Wahler, M.
    Schumann, F.
    Michelfeit, M.
    Gould, C.
    Schmidt, R.
    Wuerthner, F.
    Schmidt, G.
    Molenkamp, L. W.
    PHYSICAL REVIEW B, 2011, 84 (12):
  • [32] Spin relaxation and magnetoresistance in disordered organic semiconductors
    Bobbert, P. A.
    Nguyen, T. D.
    Wagemans, W.
    van Oost, F. W. A.
    Koopmans, B.
    Wohlgenannt, M.
    SYNTHETIC METALS, 2010, 160 (3-4) : 223 - 229
  • [33] The effect of dimerization on the magnetoresistance in organic spin valves
    Wang Hui
    Hu Gui-Chao
    Ren Jun-Feng
    CHINESE PHYSICS B, 2013, 22 (05)
  • [34] Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments
    Kim, Sang-Il
    Kim, Dong-Jun
    Seo, Min-Su
    Park, Byong-Guk
    Park, Seung-Young
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (17)
  • [35] The spin-Dicke effect in OLED magnetoresistance
    Waters, D. P.
    Joshi, G.
    Kavand, M.
    Limes, M. E.
    Malissa, H.
    Burn, P. L.
    Lupton, J. M.
    Boehme, C.
    NATURE PHYSICS, 2015, 11 (11) : 910 - 914
  • [36] Topological and Chiral Spin Hall Effects
    Rozhansky, I. V.
    Denisov, K. S.
    Lifshits, M. B.
    Averkiev, N. S.
    Lahderanta, E.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (06):
  • [37] Organic magnetoresistance based on hopping theory
    Yang Fu-Jiang
    Xie Shi-Jie
    CHINESE PHYSICS B, 2014, 23 (09)
  • [38] Spin Hall effect by surface roughness
    Zhou, Lingjun
    Grigoryan, Vahram L.
    Maekawa, Sadamichi
    Wang, Xuhui
    Xiao, Jiang
    PHYSICAL REVIEW B, 2015, 91 (04):
  • [39] Charge and spin Hall effect in spin chiral ferromagnetic graphene
    Rameshti, Babak Zare
    Zareyan, Malek
    APPLIED PHYSICS LETTERS, 2013, 103 (13)
  • [40] From spin-polarized interfaces to giant magnetoresistance in organic spin valves
    Cakir, Deniz
    Otalvaro, Diana M.
    Brocks, Geert
    PHYSICAL REVIEW B, 2014, 89 (11):