Microscopic theory of spin Hall magnetoresistance

被引:18
作者
Kato, T. [1 ]
Ohnuma, Y. [2 ]
Matsuo, M. [2 ,3 ,4 ,5 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[4] RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan
[5] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
关键词
ROOM-TEMPERATURE; NIO;
D O I
10.1103/PhysRevB.102.094437
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is composed of static and dynamic parts. The static part, which is almost independent of the temperature, originates from spin flip caused by an interfacial exchange coupling. However, the dynamic part, which is induced by the creation or annihilation of magnons, has an opposite sign from the static part. By the spin-wave approximation, we predict that the latter results in a nontrivial sign change in the SMR signal at a finite temperature. In addition, we derive the Onsager relation between spin conductance and thermal spin-current noise.
引用
收藏
页数:10
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