A 5.1% efficient kesterite Cu2ZnSnS4 (CZTS) thin film solar cell prepared using modified sulfurization process

被引：37
作者：
Gang, Myeng G. [1 ]
Gurav, Kishor V. [1 ]
Shin, Seung W. [2 ]
Hong, Chang W. [1 ]
Min, Jung H. [3 ]
Suryawanshi, Mahesh P. [1 ]
Vanalakar, Sharad A. [1 ]
Lee, Dong S. [3 ]
Kim, Jin H. [1 ]
机构：
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Optoelect Convergence Res Ctr, Kwangju 500757, South Korea
[2] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Taejon 305701, South Korea
[3] GIST, Dept Mat Sci & Engn, Gwangju, South Korea
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6 | 2015年 / 12卷 / 06期
关键词：
Cu2ZnSnS4 (CZTS); sputtering; rapid thermal annealing (RTA); thin film solar cells (TFSCs); PRECURSOR SULFUR-CONTENT; FABRICATION;
D O I：
10.1002/pssc.201400285
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Cu2ZnSnS4 (CZTS) absorber thin films are prepared by sulfurization of sputtered Cu/Sn/Zn (CZT) stacked metallic precursor. The modified sulfurization process is adapted to prepare photovoltaic quality CZTS films. Specifically, sputtered CZT precursor films are sulfurized in sulfur powder contained graphite box using rapid thermal processing furnace at 580 degrees C for 10 min, in N-2 (95%) + H2S (5%) atmosphere. The Cu-poor CZTS films with various Cu/(Zn+Sn) ratio are prepared by varying Cu layer deposition time. The effect of Cu/(Zn+Sn) ratio on the properties of CZTS films is investigated. The CZTS thin film solar cells with Cu/(Zn+Sn)=0.76 shows best conversion efficiency of 5.1% (V-oc: 573 mV, J(sc): 18.38 mA/cm(2), FF: 0.48 %, and active area: 0.31 cm(2)). (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：713 / 716
页数：4
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