Increase in the emission wavelength (over 1800nm) of InAs quantum dots grown on InP substrates using a dot-in-well structure

被引：0
|
作者：
Akahane, Kouichi [1 ]
Matumoto, Atsushi [1 ]
Umezawa, Toshimasa [1 ]
Yamamoto, Naokatsu [1 ]
Hashimoto, Keita [2 ]
Takai, Hiroshi [2 ]
机构：
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikita Machi, Koganei, Tokyo 1848795, Japan
[2] Tokyo Denki Univ, Adachi Ku, 5 Senju Asahi Cho, Tokyo 1208551, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 02期
关键词：
InAs; InP; molecular beam epitaxy; quantum dots; quantum wells; self-assemby; THRESHOLD CURRENT; TEMPERATURE; LASERS; FABRICATION; DEPENDENCE; EFFICIENCY; GAAS; GAIN; BAND;
D O I：
10.1002/pssb.201600490
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A dot-in-well structure for quantum dot (QD) growth on InP (001) vicinal substrates was introduced to increase the emission wavelength. The emission wavelength of the QDs changed from 1600nm in conventional structures to 1850nm in the proposed dot-in-well structure, when measured at room temperature. The emission intensity of this dot-in-well structure was the same as that of the conventional structure, implying that the dot-in-well structure did not degrade crystal quality.
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页数：4
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