Absorption measurements in InSe:Ho single crystal under an electric field

被引：6
|
作者：
Ates, A [1 ]
Gürbulak, BG [1 ]
Yildirim, M [1 ]
Tüzemen, S [1 ]
机构：
[1] Ataturk Univ, Dept Phys, Sci & Art Fac, TR-25240 Erzurum, Turkey
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 2004年 / 54卷 / 03期
关键词：
InSe : Ho single crystal; absorption; Urbach rule; electric field;
D O I：
10.1023/B:CJOP.0000018134.99750.18
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
InSe:Ho single crystal was grown by Bridgman-Stockberger method. Electric field effects on the absorption measurements have been investigated as a function of temperature in InSe:Ho single crystal. The absorption edge shifted towards longer wavelengths and a decrease of intensity in absorption spectra occurred under an electric field of 7.5 kV/cm. Using absorption measurements, steepness parameter and Urbach energy were calculated under electric field. Applied electric field caused an increase in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.322 and 1.301 eV for zero voltage and 1.245 and 1.232 eV for applied electric field, respectively.
引用
收藏
页码：377 / 385
页数：9
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