Morphological characterization of ITO thin films surfaces

被引：32
|
作者：
Raoufi, Davood [1 ,2 ]
机构：
[1] Univ Bu Ali Sina, Dept Phys, Hamadan, Iran
[2] Univ Isfahan, Dept Phys, Quantum Opt Res Grp, Esfahan, Iran
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 06期
关键词：
ITO; Thin film; Fractal image processing; Surface morphology; MULTIFRACTAL ANALYSIS; OXIDE; MICROSTRUCTURE;
D O I：
10.1016/j.apsusc.2008.10.020
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, indium tin oxide (ITO) thin films were deposited by electron beam evaporation method on glass substrates at room temperature, followed by postannealing at 200 and 300 degrees C for annealing time up to 1 h. Fractal image processing has been applied to describe the surface morphology of ITO thin films from their atomic force microscopy (AFM) images. These topographical images of the ITO thin films indicate changes in morphological behavior of the film. Also, the results suggest that the fractal dimension D can be used to explain the change of the entire grain morphology along the growth direction. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：3682 / 3686
页数：5
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