A 1 cm x 1 cm In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

被引：10
作者：
Clark, WR [1 ]
Davis, A
Roland, M
Vaccaro, K
机构：
[1] OptoGration Inc, Haverhill, MA 01835 USA
[2] Solid State Sci Corp, Hollis, NH 03049 USA
[3] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期
关键词：
avalanche multiplication; avalanche photodiode (APD); infrared detector; photodetector; photodiode; photodiode array;
D O I：
10.1109/LPT.2005.860032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a 1 cm x 1 cm array of 100 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 AM had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.
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页码：19 / 21
页数：3
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