Electrochemical investigation and ab initio computation of passive film properties on copper in anaerobic sulphide solutions

被引：120

作者：

Kong, Decheng ^{[1
]}

Xu, Aoni ^{[1
]}

Dong, Chaofang ^{[1
]}

Mao, Feixiong ^{[2
]}

Xiao, Kui ^{[1
]}

Li, Xiaogang ^{[1
]}

Macdonald, Digby D. ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, MOE, Ctr Corros & Protect, Key Lab Corros & Protect, Beijing 100083, Peoples R China

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

CORROSION SCIENCE | 2017年 / 116卷

基金：

中国国家自然科学基金;

关键词：

Copper; EIS; Ab initio computation; Electrochemical calculation; Passive film; LONG-TERM CORROSION; SEMICONDUCTING PROPERTIES; CRYSTAL-STRUCTURE; WASTE CONTAINER; GROWTH; DEFECT; DIFFUSION; DISPOSAL; BEHAVIOR; CU2S;

D O I：

10.1016/j.corsci.2016.12.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrochemical measurements based on the point defect model and ab initio calculations were employed to investigate the properties of passive films formed on copper in anaerobic sulphide-containing solutions at different temperatures. P-type semiconductor characteristics were observed at potentials more positive than -0.75 V-SCE, which is consistent with copper vacancies being the dominant defect, but n-type behaviour was observed at lower potentials. The density of copper vacancies (approximately 10(22) cm(-3)) increases with temperature and formation potential, and the diffusion coefficient of copper vacancies lies within the range of 10(-13) to 10(-14) cm(2)/s based on ab initio computations and electrochemical measurements. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：34 / 43

页数：10

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