The effects of surface treatment on device performance in pentacene-based thin film transistor

被引:38
作者
Koo, JB [1 ]
Kim, SH
Lee, JH
Ku, CH
Lim, SC
Zyung, T
机构
[1] Elect & Telecommun Res Inst, Future Technol Res Div, Taejon 305350, South Korea
[2] Kyung Hee Univ, Informat Display Dept, Seoul 130701, South Korea
关键词
organic thin film transistor; threshold voltage; mobility; pentacene; HMDS;
D O I
10.1016/j.synthmet.2005.10.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the influence of surface treatment using hexamethyldisilazane (HMDS) on device performance of pentacene-based thin film transistor. The samples with surface treatment using HMDS show higher mobility, lower Subthreshold slope, and lower off-current compared to the untreated samples. We have also investigated the effect of various coating methods of HMDS on device performance. In the case of post-baked samples after spin coating, the improvements of mobility and on-current are larger than those of spin-coated samples. Especially a dip-coated sample has threshold voltage of -4.11 V and turn-on voltage of -0.03 V, showing the enhancement mode characteristics, which is useful for the operation as a circuit and a switch device for active-matrix displays. However, the mobility of dip-coated sample is one order lower than that of spin-coated sample, and hysteresis is larger than that of spin-coated sample. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:99 / 103
页数:5
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