Formation of a-C thin films by plasma-based ion implantation

被引：0

作者：

Watanabe, Toshiya ^{[1
]}

Yamamoto, Kazuhiro ^{[2
]}

Koga, Yoshinori ^{[2
]}

Tanaka, Akihiro ^{[2
]}

机构：

[1] AIST, Res Ctr Adv Carbon Mat, Joint Res Consortium Frontier Carbon Technol, Japan Fine Ceram Ctr, Tsukuba, Ibaraki 3058565, Japan

[2] AIST, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2001年 / 2卷 / 3-4期

关键词：

Plasma-based ion implantation; ECR plasma with a minor field; Carbon film; Chemical bonding; Mechanical property;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon films were prepared on a Si wafer substrate by using a plasma-based ion implantation (PBII) technique. The homogeneity of the carbon films formed on the three-dimensional object and the influence of the duty ratio of the pulse bias to the target on the property of the carbon films were investigated. The homogeneity of the carbon films formed on a convex face and that formed on a concave face by the incidence of the microwave to the target with a low angle of about -30 degrees was almost a constant. The application of the ECR plasma source, with a mirror field, to the PBII system was efficient enough to improve the homogeneity, even though the plasma density was not very high. Diamond-like carbon films with a flat surface and a low friction coefficient can be formed by applying negative high-voltage pulses to a substrate with a low duty ratio of 1%. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页数：7

共 50 条

[1] Synthesis of a-C thin films by plasma-based ion implantation using an electron cyclotron resonance plasma source with a mirror field
Watanabe, T
Yamamoto, K
Tsuda, O
Koga, Y
Tanaka, A
SURFACE & COATINGS TECHNOLOGY, 2003, 169 : 266 - 269
[2] Effects of Negative Bias Pulse on Characteristics of a-C:H Films Prepared by Plasma-Based Ion Implantation
Wang Yujiang
Ma Xinxin
Tang Guangze
Sun Mingren
Xu Binshi
ADVANCED MATERIAL SCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2011, 675-677 : 1279 - +
[3] Synthesis of a-C:H films by plasma-based ion implantation using electron cyclotron resonance plasma with, a mirror field and their tribological properties
Watanabe, T
Yamashita, N
Suzuki, M
Ishihara, M
Ohana, T
Yamamoto, K
Tsuda, O
Tanaka, A
Koga, Y
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2004, 14 (03): : 161 - 171
[4] Plasma-based ion implantation
Möller, W
Mukherjee, S
CURRENT SCIENCE, 2002, 83 (03): : 237 - 253
[5] Formation of diamond-like carbon films by plasma-based ion implantation and their characterization
Ensinger, Wolfgang
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2006, 16 (01): : 1 - 32
[6] Characteristics of carbon films prepared by plasma-based ion implantation
Liao, J
Liu, WM
Xu, T
Xue, QJ
CARBON, 2004, 42 (02) : 387 - 393
[7] Synthesis of boron carbonitride films by plasma-based ion implantation
Xu, Shuyan
Ma, Xinxin
Sun, Mingren
PROGRESSES IN FRACTURE AND STRENGTH OF MATERIALS AND STRUCTURES, 1-4, 2007, 353-358 : 1850 - 1853
[8] Properties of hydrogenated amorphous carbon thin films deposited by plasma-based ion implantation method
Ishihara, M
Suzuki, M
Watanabe, T
Tsuda, O
Nakamura, T
Tanaka, A
Koga, Y
DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 1449 - 1453
[9] Plasma-based ion implantation:: a valuable technology for the elaboration of innovative materials and nanostructured thin films
Vempaire, D
Pelletier, J
Lacoste, A
Béchu, S
Sirou, J
Miraglia, S
Fruchart, D
PLASMA PHYSICS AND CONTROLLED FUSION, 2005, 47 : A153 - A166
[10] The influence of DC biasing on the uniformity of a-C:H films for three-dimensional substrates by using a plasma-based ion implantation technique
Watanabe, T
Yamamoto, K
Tsuda, O
Tanaka, A
Koga, Y
Takai, O
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 726 - 730

← 1 2 3 4 5 →