Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method
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作者:
Park, Young-Hwan
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Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South KoreaKorea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South Korea
Park, Young-Hwan
[1
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Kang, Jungwon
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机构:Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South Korea
Kang, Jungwon
Kim, Yong-Hoon
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Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South KoreaKorea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South Korea
Kim, Yong-Hoon
[1
]
Han, Jeong-In
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Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South KoreaKorea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South Korea
Han, Jeong-In
[1
]
机构:
[1] Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Kyunggi, South Korea
By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of 0.016 cm(2)/Vs and the anisole HMDS-treated device shows the highest I-on/I-off ratio off 10(5).