Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

被引：27
作者：
Smith, RC
Hoilien, N
Roberts, J
Campbell, SA
Gladfelter, WL
机构：
[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 02期
关键词：
D O I：
10.1021/cm011538m
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.
引用
收藏
页码：474 / 476
页数：3
相关论文
共 17 条
  • [1] Combinatorial fabrication process for a-Si:H thin film transistors
    Aiyer, HN
    Nishioka, D
    Maruyama, R
    Shinno, H
    Matsuki, N
    Miyazaki, K
    Fujioka, H
    Koinuma, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (1AB): : L81 - L83
  • [2] Scaling the gate dielectric: Materials, integration, and reliability
    Buchanan, DA
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) : 245 - 264
  • [3] Colombo DG, 1998, CHEM VAPOR DEPOS, V4, P220, DOI 10.1002/(SICI)1521-3862(199812)04:06<220::AID-CVDE220>3.0.CO
  • [4] 2-E
  • [5] Gilmer DC, 1998, CHEM VAPOR DEPOS, V4, P9, DOI 10.1002/(SICI)1521-3862(199801)04:01<9::AID-CVDE9>3.3.CO
  • [6] 2-V
  • [7] High dielectric constant Hf-Sn-Ti-O thin films
    Schneemeyer, LF
    van Dover, RB
    Fleming, RM
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (13) : 1967 - 1969
  • [8] Smith RC, 2000, ADV MATER OPT ELECTR, V10, P105, DOI 10.1002/1099-0712(200005/10)10:3/5<105::AID-AMO402>3.0.CO
  • [9] 2-J
  • [10] Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
    Smith, RC
    Hoilien, N
    Taylor, CJ
    Ma, TZ
    Campbell, SA
    Roberts, JT
    Copel, M
    Buchanan, DA
    Gribelyuk, M
    Gladfelter, WL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (09) : 3472 - 3476
12