Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

被引：21

作者：

Hirama, Kazuyuki ^{[1
]}

Taniyasu, Yoshitaka ^{[1
]}

Kasu, Makoto ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期

基金：

日本学术振兴会;

关键词：

ALN; SAPPHIRE; HEMTS; FILMS;

D O I：

10.1143/JJAP.51.090114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of an AlGaN/GaN high-electron mobility trainsistor (HEMT) structure on a diamond (111) substrate was investigated. Due to the misorientation of the diamond (111) surface, the AlGaN/GaN HEMT structure showed the macro-step surface. Using diamond surfaces with two different misorientation angles (3 and 0.5 degrees), we found that the one with the small misorientation angle is effective for obtaining a flat AlGaN/GaN HEMT surface. Threading dislocation density of the AlGaN/GaN HEMT structure grown on the diamond (111) surface was evaluated from cross-sectional transmission electron microscope images. The densities of pure-screw-, pure-edge- and mixed-type threading dislocation were 0.3 x 10(9), 4.1 x 10(9), and 4.5 x 10(9) cm(-2), respectively. The AlGaN/GaN HEMT eptaxially grown on the diamond (111) substrate showed the maximum drain current of 800 mA/mm with little self-heating effect. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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